r ds(on) < 8.5m ? @ v gs =10v high density cell design for ultra low rdson fully characterized avalanche voltage and current special designed for convertors and power controls good stability and uniformity with high eas excellent package for good heat dissipation green molding compound case: to-220 package parameter symbol limit unit drain-source voltage v ds 85 v gate-source voltage v gs 20 v drain current-continuous i d 80 a drain current-continuous(t c =100 ) i d (100 ) 60 a pulsed drain current i dm 320 a maximum power dissipation p d 170 w peak diode recovery voltage dv/dt 15 v/ns derating factor 1.13 w/ single pulse avalanche energy (note 5) e as 620 mj operating junction and st orage temperature range t j ,t stg -55 to 175 t o - 220 mechanical drawing t o - 220 mechanical drawing 80N85T n-channel power mosfet maximum ratings t a = 25 c unless otherwise specified features mechanical data
thermal characteristic thermal resistance,junction-to-case(note 2) r jc 0.88 /w electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss gs =0 v v i d =250 a 87 89 - v zero gate voltage drain current i dss ds = v 85v,v gs =0v - - 1 a gate-body leakage current i gss gs = v 20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) ds =v v gs ,i d =250 a 2 2.85 4 v drain-source on-state resistance r ds(on) gs = v 10v, i d =40a - 6.8 8.5 m ? forward transconductance g fs ds = v 25v,i d =40a 110 - - s dynamic characteristics (note4) input capacitance c lss - - 4400 pf output capacitance c oss - - 340 pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz - 260 - pf switching characteristics (note 4) turn-on delay time t d(on) - - 18 ns turn-on rise time t r - - ns 12 turn-off delay time t d(off) - - ns 56 turn-off fall time t f vdd=30v,id=2a,rl=15 ? ,rg=2.5 ? ,vgs=10v - 15 - ns total gate charge q g - - 100 nc gate-source charge q gs - - 20 nc gate-drain charge q gd v ds =30v,i d =30a, v gs =10v - 30 - nc drain-source diode characteristics diode forward voltage (note 3) v sd gs =0 v v,i s =40a - - 1.2 v diode forward current (note 2) i s - - 80 a reverse recovery time t rr - 36 ns reverse recovery charge qrr tj=25 ,i f = 75a,di/dt=100a/ s (note3) - 56 nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. eas condition tj=25 ,v dd =40v,v g =10v,l=0.5mh,rg=25 ?
switching test circuit switching waveforms gate charge test circuit gate charge waveform v dd bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit t p time unclamped inductive switching waveforms
vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance(m ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a)
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 v gs(th) vs junction temperature i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance normalized bvdss
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